Theoretical Study of Resonant Tunneling in ZnO/ZnCdO Triangular Double-Barrier Heterostructure

  • E. Lavanya
  • , L. Bruno Chandrasekar
  • , M. Karunakaran
  • , A. Dinesh
  • , Lalitha Gnanasekaran
  • , Madhappan Santhamoorthy
  • , E. Priyadharshini
  • , L. Guganathan

Producción científica: Contribución a una revistaArtículorevisión exhaustiva

2 Citas (Scopus)

Resumen

Abstract: ZnO/ZnCdO triangular double-barrier heterostructure is considered to examine the tunneling properties of electrons. The Airy function is used as the eigen function in the barrier region. The transfer matrix is formed by implementing boundary conditions and hence transmission coefficients are evaluated. The role of barrier width, Cd concentration and heterostructure strain on resonant tunneling are discussed. The increasing barrier width shifts the transparency peak to the higher energy level. The increasing Cd concentration has a huge role in deciding the tunneling properties of electrons in the heterostructure. The account of strain has great influence and the effect of strain is dominant at a high value of Cd concentration. The tunneling lifetime of electrons is also discussed.

Idioma originalInglés
Páginas (desde-hasta)211-216
Número de páginas6
PublicaciónSemiconductors
Volumen59
N.º3
DOI
EstadoPublicada - mar. 2025

Huella

Profundice en los temas de investigación de 'Theoretical Study of Resonant Tunneling in ZnO/ZnCdO Triangular Double-Barrier Heterostructure'. En conjunto forman una huella única.

Citar esto