The Influence of Bi Doping Concentration on Structural, Dielectric and Optical Properties of Bi-doped ZnO thin Films

Abstract: Successive ionic layer adsorption and reaction method is employed to prepare the Bi-doped ZnO thin films and the prepared films are annealed at 500°C. The prepared films have preferably c-axis orientation and the doping of Bi enhances orientation along c-direction. The Debye-Scherrer’s formula and Williamson-Hall equation are used to examine the crystallite size of the films. The doping of Bi in the Zn lattice increases the crystallite size and it enhances the degree of periodicity of the atoms. The band gap of the films is found using its absorbance and transmission spectra. The undoped ZnO film shows the band gap 3.14 eV from the absorbance spectra and the same is 3.19 eV from the transmission spectra. The films are p-type in nature. The loss coefficient, quality factor, impedance and phase angle are analyzed as a function of Bi-doping concentration.