Refraction index modulation induced with transverse electric field in double tunnel-coupled GaAs/AlGaAs quantum wells

  • A. A. Shumilov
  • , M. Ya Vinnichenko
  • , R. M. Balagula
  • , L. E. Vorobjev
  • , D. A. Firsov
  • , M. M. Kulagina
  • , A. P. Vasil'Iev
  • , C. A. Duque
  • , A. Tiutiunnyk
  • , V. Akimov
  • , R. L. Restrepo
  • , V. N. Tulupenko
  • , A. L. Ter-Martirosyan

Producción científica: Contribución a una revistaArtículo de la conferenciarevisión exhaustiva

Resumen

Modulation of refraction index under transverse electric field was studied in structures with multiple tunnel-coupled GaAs/AlGaAs quantum wells in the spectral range corresponding to intersubband light absorption. The change of refraction index in electric field was calculated using Kramers-Kronig relation and experimentally determined spectra of intersubband light absorption in equilibrium conditions and under transverse electric field.

Idioma originalInglés
Número de artículo012076
PublicaciónJournal of Physics: Conference Series
Volumen643
N.º1
DOI
EstadoPublicada - 2 nov. 2015
Publicado de forma externa
Evento2nd International School and Conference Saint-Petersburg OPEN on Optoelectronics, Photonics, Engineering and Nanostructures, SPbOPEN 2015 - St. Petersburg, Federación de Rusia
Duración: 6 abr. 20158 abr. 2015

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