Intersubband Energy Differences of Delta-Doped Quantum Wells in External Electric Field

Viktor Tulupenko; Volodymyr Akimov; Roman Demediuk; Anton Tiutiunnyk; Carlos Duque; Dmitrii Sushchenko; Oksana Fomina; Alvaro Morales; David Laroze

doi:10.1109/ELNANO54667.2022.9927043

Intersubband Energy Differences of Delta-Doped Quantum Wells in External Electric Field

Viktor Tulupenko
, Volodymyr Akimov
, Roman Demediuk
, Anton Tiutiunnyk
, Carlos Duque
, Dmitrii Sushchenko
, Oksana Fomina
, Alvaro Morales
, David Laroze

Producción científica: Contribución a una revista › Artículo de la conferencia › revisión exhaustiva

Resumen

The energy differences between subbands of a semiconductor quantum well delta-doped inside the well can be tuned by electronic temperature. The effect can be used in a novel schematic of a tunable semiconductor optical device. Here we study numerically the dynamics of the difference between two lower size-quantized subbands against electronic temperature and external transverse electric field in 20 nm wide SiGe/Si doped with a hydrogenic donor to the edge and the center of the well.

Idioma original	Inglés
Páginas (desde-hasta)	133-136
Número de páginas	4
Publicación	Proceedings - IEEE International Conference on Electronics and Nanotechnology, ELNANO
DOI	https://doi.org/10.1109/ELNANO54667.2022.9927043
Estado	Publicada - 2022
Evento	41st IEEE International Conference on Electronics and Nanotechnology, ELNANO 2022 - Kyiv, Ucrania Duración: 10 oct. 2022 → 14 oct. 2022

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@article{f6f11a58ed48425d895df7d5d6d765db,

title = "Intersubband Energy Differences of Delta-Doped Quantum Wells in External Electric Field",

abstract = "The energy differences between subbands of a semiconductor quantum well delta-doped inside the well can be tuned by electronic temperature. The effect can be used in a novel schematic of a tunable semiconductor optical device. Here we study numerically the dynamics of the difference between two lower size-quantized subbands against electronic temperature and external transverse electric field in 20 nm wide SiGe/Si doped with a hydrogenic donor to the edge and the center of the well.",

keywords = "SiGe quantum wells, electric field, modulation doping, shallow impurity",

author = "Viktor Tulupenko and Volodymyr Akimov and Roman Demediuk and Anton Tiutiunnyk and Carlos Duque and Dmitrii Sushchenko and Oksana Fomina and Alvaro Morales and David Laroze",

note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 41st IEEE International Conference on Electronics and Nanotechnology, ELNANO 2022 ; Conference date: 10-10-2022 Through 14-10-2022",

year = "2022",

doi = "10.1109/ELNANO54667.2022.9927043",

language = "English",

pages = "133--136",

journal = "Proceedings - IEEE International Conference on Electronics and Nanotechnology, ELNANO",

issn = "2377-6935",

}

TY - JOUR

T1 - Intersubband Energy Differences of Delta-Doped Quantum Wells in External Electric Field

AU - Tulupenko, Viktor

AU - Akimov, Volodymyr

AU - Demediuk, Roman

AU - Tiutiunnyk, Anton

AU - Duque, Carlos

AU - Sushchenko, Dmitrii

AU - Fomina, Oksana

AU - Morales, Alvaro

AU - Laroze, David

PY - 2022

Y1 - 2022

N2 - The energy differences between subbands of a semiconductor quantum well delta-doped inside the well can be tuned by electronic temperature. The effect can be used in a novel schematic of a tunable semiconductor optical device. Here we study numerically the dynamics of the difference between two lower size-quantized subbands against electronic temperature and external transverse electric field in 20 nm wide SiGe/Si doped with a hydrogenic donor to the edge and the center of the well.

AB - The energy differences between subbands of a semiconductor quantum well delta-doped inside the well can be tuned by electronic temperature. The effect can be used in a novel schematic of a tunable semiconductor optical device. Here we study numerically the dynamics of the difference between two lower size-quantized subbands against electronic temperature and external transverse electric field in 20 nm wide SiGe/Si doped with a hydrogenic donor to the edge and the center of the well.

KW - SiGe quantum wells

KW - electric field

KW - modulation doping

KW - shallow impurity

UR - https://www.scopus.com/pages/publications/85142622068

U2 - 10.1109/ELNANO54667.2022.9927043

DO - 10.1109/ELNANO54667.2022.9927043

M3 - Conference article

AN - SCOPUS:85142622068

SN - 2377-6935

SP - 133

EP - 136

JO - Proceedings - IEEE International Conference on Electronics and Nanotechnology, ELNANO

JF - Proceedings - IEEE International Conference on Electronics and Nanotechnology, ELNANO

T2 - 41st IEEE International Conference on Electronics and Nanotechnology, ELNANO 2022

Y2 - 10 October 2022 through 14 October 2022

ER -

Intersubband Energy Differences of Delta-Doped Quantum Wells in External Electric Field

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