Intense laser field effect on D₂⁺ molecular complex localized in semiconductor quantum wells

D₂⁺ molecular ion in a semiconductor quantum well under laser-field radiation by using finite elements method within the effective mass approximation is theoretically studied. The effects of the laser radiation, donor-donor separation, and quantum well width on the D₂⁺ total energy and the D₂⁺ binding energy corresponding to the second ionization process D₂⁺→D⁺+D⁺+e^- are analyzed. We show that the laser-field radiation modifies significantly the equilibrium length and the dissociation energy of a D₂⁺- complex in a quantum well. Our results in the limit cases are in good agreement with those previously reported for a single donor impurity D⁰.