Improving the Strain Control Performance of MoS₂ Monolayer to Develop Flexible Electronics

In recent years, two-dimensional (2D) materials with unique mechanical, optical, and electrical properties have attracted extensive attention. In terms of mechanical properties, 2D molybdenum disulfide (MoS₂) can perform larger strains than traditional semiconductor materials. In this contribution, the chemical vapor deposition technique to grow MoS₂ films on a Si wafer and transfer them onto a flexible substrate is used. The controlled deformation of 2D MoS₂ samples is realized by encapsulating them with a flexible acrylate film via successive spin-coating and photopolymerization. Improved strain control is achieved due to the perfect integration of different components (MoS₂/substrate) and the high adhesion of polymers. This approach provides a better detection of the changing structure of the MoS₂ monolayer on the flexible substrate during tensile. It is noted that the crystal symmetry damage caused by strain is reflected in the redshift of the characteristic bands of MoS₂. Hence, an effective way for strain regulation of MoS₂ for future applications in flexible devices is provided.