Hydrogenic Impurity States in a Delta-Layer Within Quantum Wells in a Transversal Electric Field

Viktor Tulupenko; Volodymyr Akimov; Roman Demediuk; Anton Tiutiunnyk; Carlos Duque; Dmitrii Sushchenko; Oksana Fomina; Alvaro Morales; David Laroze

doi:10.1109/ELNANO50318.2020.9088792

Hydrogenic Impurity States in a Delta-Layer Within Quantum Wells in a Transversal Electric Field

Viktor Tulupenko
, Volodymyr Akimov
, Roman Demediuk
, Anton Tiutiunnyk
, Carlos Duque
, Dmitrii Sushchenko
, Oksana Fomina
, Alvaro Morales
, David Laroze

Producción científica: Contribución a una revista › Artículo de la conferencia › revisión exhaustiva

2 Citas (Scopus)

Resumen

The effect of a transversal electric field on the impurity binding energy and the energy differences between the space-quantized subbands of center delta-doped SiGe/Si quantum well structure is studied numerically with a self-consistent method. The result is explained in terms of the concurrent effects of impurity ionization and the applied field. The predicted phenomenon can be used to tune the energy distances and, accordingly, the working frequencies of possible optical devices.

Idioma original	Inglés
Número de artículo	9088792
Páginas (desde-hasta)	109-113
Número de páginas	5
Publicación	Proceedings - IEEE International Conference on Electronics and Nanotechnology, ELNANO
DOI	https://doi.org/10.1109/ELNANO50318.2020.9088792
Estado	Publicada - 2020
Evento	40th IEEE International Conference on Electronics and Nanotechnology, ELNANO 2020 - Kyiv, Ucrania Duración: 22 abr. 2020 → 24 abr. 2020

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Tulupenko, V., Akimov, V., Demediuk, R., Tiutiunnyk, A., Duque, C., Sushchenko, D., Fomina, O., Morales, A., & Laroze, D. (2020). Hydrogenic Impurity States in a Delta-Layer Within Quantum Wells in a Transversal Electric Field. Proceedings - IEEE International Conference on Electronics and Nanotechnology, ELNANO, 109-113. Artículo 9088792. https://doi.org/10.1109/ELNANO50318.2020.9088792

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abstract = "The effect of a transversal electric field on the impurity binding energy and the energy differences between the space-quantized subbands of center delta-doped SiGe/Si quantum well structure is studied numerically with a self-consistent method. The result is explained in terms of the concurrent effects of impurity ionization and the applied field. The predicted phenomenon can be used to tune the energy distances and, accordingly, the working frequencies of possible optical devices.",

keywords = "SiGe quantum wells, electric field, modulation doping, shallow impurity",

author = "Viktor Tulupenko and Volodymyr Akimov and Roman Demediuk and Anton Tiutiunnyk and Carlos Duque and Dmitrii Sushchenko and Oksana Fomina and Alvaro Morales and David Laroze",

note = "Publisher Copyright: {\textcopyright} 2020 IEEE.; 40th IEEE International Conference on Electronics and Nanotechnology, ELNANO 2020 ; Conference date: 22-04-2020 Through 24-04-2020",

year = "2020",

doi = "10.1109/ELNANO50318.2020.9088792",

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Hydrogenic Impurity States in a Delta-Layer Within Quantum Wells in a Transversal Electric Field. / Tulupenko, Viktor; Akimov, Volodymyr; Demediuk, Roman et al.
En: Proceedings - IEEE International Conference on Electronics and Nanotechnology, ELNANO, 2020, p. 109-113.

Producción científica: Contribución a una revista › Artículo de la conferencia › revisión exhaustiva

TY - JOUR

T1 - Hydrogenic Impurity States in a Delta-Layer Within Quantum Wells in a Transversal Electric Field

AU - Tulupenko, Viktor

AU - Akimov, Volodymyr

AU - Demediuk, Roman

AU - Tiutiunnyk, Anton

AU - Duque, Carlos

AU - Sushchenko, Dmitrii

AU - Fomina, Oksana

AU - Morales, Alvaro

AU - Laroze, David

PY - 2020

Y1 - 2020

N2 - The effect of a transversal electric field on the impurity binding energy and the energy differences between the space-quantized subbands of center delta-doped SiGe/Si quantum well structure is studied numerically with a self-consistent method. The result is explained in terms of the concurrent effects of impurity ionization and the applied field. The predicted phenomenon can be used to tune the energy distances and, accordingly, the working frequencies of possible optical devices.

AB - The effect of a transversal electric field on the impurity binding energy and the energy differences between the space-quantized subbands of center delta-doped SiGe/Si quantum well structure is studied numerically with a self-consistent method. The result is explained in terms of the concurrent effects of impurity ionization and the applied field. The predicted phenomenon can be used to tune the energy distances and, accordingly, the working frequencies of possible optical devices.

KW - SiGe quantum wells

KW - electric field

KW - modulation doping

KW - shallow impurity

UR - https://www.scopus.com/pages/publications/85086315234

U2 - 10.1109/ELNANO50318.2020.9088792

DO - 10.1109/ELNANO50318.2020.9088792

M3 - Conference article

AN - SCOPUS:85086315234

SN - 2377-6935

SP - 109

EP - 113

JO - Proceedings - IEEE International Conference on Electronics and Nanotechnology, ELNANO

JF - Proceedings - IEEE International Conference on Electronics and Nanotechnology, ELNANO

M1 - 9088792

T2 - 40th IEEE International Conference on Electronics and Nanotechnology, ELNANO 2020

Y2 - 22 April 2020 through 24 April 2020

ER -

Hydrogenic Impurity States in a Delta-Layer Within Quantum Wells in a Transversal Electric Field

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