Electronic structure and optical properties of triangular GaAs/AlGaAs quantum dots: Exciton and impurity states

A. Tiutiunnyk; V. Akimov; V. Tulupenko; M. E. Mora-Ramos; E. Kasapoglu; F. Ungan; I. Sökmen; A. L. Morales; C. A. Duque

doi:10.1016/j.physb.2015.12.045

Electronic structure and optical properties of triangular GaAs/AlGaAs quantum dots: Exciton and impurity states

A. Tiutiunnyk
, V. Akimov
, V. Tulupenko
, M. E. Mora-Ramos
, E. Kasapoglu
, F. Ungan
, I. Sökmen
, A. L. Morales
, C. A. Duque

Producción científica: Contribución a una revista › Artículo › revisión exhaustiva

13 Citas (Scopus)

Resumen

Electronic structure and optical properties in equilateral triangular GaAs/Al_0.3Ga_0.7As quantum dots are studied extensively. The effects of donor and acceptor impurity atoms positioned in the orthocenter of the triangle, as well as of the external DC electric field are taken into account. Binding energies of the impurity, exciton energies, interband photoluminescence peak positions as well as linear and non-linear optical properties in THz range caused by transitions between excitonic states are calculated and discussed.

Idioma original	Inglés
Páginas (desde-hasta)	95-108
Número de páginas	14
Publicación	Physica B: Condensed Matter
Volumen	484
DOI	https://doi.org/10.1016/j.physb.2015.12.045
Estado	Publicada - 1 mar. 2016
Publicado de forma externa	Sí

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@article{1fa64fc5ff5b4b27b32ab593ab0be3b6,

title = "Electronic structure and optical properties of triangular GaAs/AlGaAs quantum dots: Exciton and impurity states",

abstract = "Electronic structure and optical properties in equilateral triangular GaAs/Al0.3Ga0.7As quantum dots are studied extensively. The effects of donor and acceptor impurity atoms positioned in the orthocenter of the triangle, as well as of the external DC electric field are taken into account. Binding energies of the impurity, exciton energies, interband photoluminescence peak positions as well as linear and non-linear optical properties in THz range caused by transitions between excitonic states are calculated and discussed.",

keywords = "Electric field, Excitons, Nonlinear optical properties, Quantum dots, Shallow impurity",

author = "A. Tiutiunnyk and V. Akimov and V. Tulupenko and Mora-Ramos, \{M. E.\} and E. Kasapoglu and F. Ungan and I. S{\"o}kmen and Morales, \{A. L.\} and Duque, \{C. A.\}",

year = "2016",

month = mar,

day = "1",

doi = "10.1016/j.physb.2015.12.045",

language = "English",

volume = "484",

pages = "95--108",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

}

TY - JOUR

T1 - Electronic structure and optical properties of triangular GaAs/AlGaAs quantum dots

T2 - Exciton and impurity states

AU - Tiutiunnyk, A.

AU - Akimov, V.

AU - Tulupenko, V.

AU - Mora-Ramos, M. E.

AU - Kasapoglu, E.

AU - Ungan, F.

AU - Sökmen, I.

AU - Morales, A. L.

AU - Duque, C. A.

PY - 2016/3/1

Y1 - 2016/3/1

N2 - Electronic structure and optical properties in equilateral triangular GaAs/Al0.3Ga0.7As quantum dots are studied extensively. The effects of donor and acceptor impurity atoms positioned in the orthocenter of the triangle, as well as of the external DC electric field are taken into account. Binding energies of the impurity, exciton energies, interband photoluminescence peak positions as well as linear and non-linear optical properties in THz range caused by transitions between excitonic states are calculated and discussed.

AB - Electronic structure and optical properties in equilateral triangular GaAs/Al0.3Ga0.7As quantum dots are studied extensively. The effects of donor and acceptor impurity atoms positioned in the orthocenter of the triangle, as well as of the external DC electric field are taken into account. Binding energies of the impurity, exciton energies, interband photoluminescence peak positions as well as linear and non-linear optical properties in THz range caused by transitions between excitonic states are calculated and discussed.

KW - Electric field

KW - Excitons

KW - Nonlinear optical properties

KW - Quantum dots

KW - Shallow impurity

UR - https://www.scopus.com/pages/publications/84955175733

U2 - 10.1016/j.physb.2015.12.045

DO - 10.1016/j.physb.2015.12.045

M3 - Article

AN - SCOPUS:84955175733

SN - 0921-4526

VL - 484

SP - 95

EP - 108

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

ER -

Electronic structure and optical properties of triangular GaAs/AlGaAs quantum dots: Exciton and impurity states

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