Electron Raman scattering in a double quantum well tuned by an external nonresonant intense laser field

A. Tiutiunnyk; M. E. Mora-Ramos; A. L. Morales; C. M. Duque; R. L. Restrepo; F. Ungan; J. C. Martínez-Orozco; E. Kasapoglu; C. A. Duque

doi:10.1016/j.optmat.2017.01.001

Electron Raman scattering in a double quantum well tuned by an external nonresonant intense laser field

A. Tiutiunnyk
, M. E. Mora-Ramos
, A. L. Morales
, C. M. Duque
, R. L. Restrepo
, F. Ungan
, J. C. Martínez-Orozco
, E. Kasapoglu
, C. A. Duque

Producción científica: Contribución a una revista › Artículo › revisión exhaustiva

14 Citas (Scopus)

Resumen

In this work we shall present a study of inelastic light scattering involving inter-subband electron transitions in coupled GaAs-(Ga,Al)As quantum wells. Calculations include the electron related Raman differential cross section and Raman gain. The effects of an external nonresonant intense laser field are used in order to tune these output properties. The confined electron states will be described by means of a diagonalization procedure within the effective mass and parabolic band approximations. It is shown that the application of the intense laser field can produce values of the intersubband electron Raman gain above 400 cm⁻¹. The system proposed here is an alternative choice for the development of Al_xGa_1−xAs semiconductor laser diodes that can be tuned via an external nonresonant intense laser field.

Idioma original	Inglés
Páginas (desde-hasta)	496-501
Número de páginas	6
Publicación	Optical Materials
Volumen	64
DOI	https://doi.org/10.1016/j.optmat.2017.01.001
Estado	Publicada - 1 feb. 2017
Publicado de forma externa	Sí

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title = "Electron Raman scattering in a double quantum well tuned by an external nonresonant intense laser field",

abstract = "In this work we shall present a study of inelastic light scattering involving inter-subband electron transitions in coupled GaAs-(Ga,Al)As quantum wells. Calculations include the electron related Raman differential cross section and Raman gain. The effects of an external nonresonant intense laser field are used in order to tune these output properties. The confined electron states will be described by means of a diagonalization procedure within the effective mass and parabolic band approximations. It is shown that the application of the intense laser field can produce values of the intersubband electron Raman gain above 400 cm−1. The system proposed here is an alternative choice for the development of AlxGa1−xAs semiconductor laser diodes that can be tuned via an external nonresonant intense laser field.",

keywords = "Intense laser field, Quantum well, Raman scattering",

author = "A. Tiutiunnyk and Mora-Ramos, \{M. E.\} and Morales, \{A. L.\} and Duque, \{C. M.\} and Restrepo, \{R. L.\} and F. Ungan and Mart{\'i}nez-Orozco, \{J. C.\} and E. Kasapoglu and Duque, \{C. A.\}",

note = "Publisher Copyright: {\textcopyright} 2017 Elsevier B.V.",

year = "2017",

month = feb,

day = "1",

doi = "10.1016/j.optmat.2017.01.001",

language = "English",

volume = "64",

pages = "496--501",

journal = "Optical Materials",

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TY - JOUR

T1 - Electron Raman scattering in a double quantum well tuned by an external nonresonant intense laser field

AU - Tiutiunnyk, A.

AU - Mora-Ramos, M. E.

AU - Morales, A. L.

AU - Duque, C. M.

AU - Restrepo, R. L.

AU - Ungan, F.

AU - Martínez-Orozco, J. C.

AU - Kasapoglu, E.

AU - Duque, C. A.

PY - 2017/2/1

Y1 - 2017/2/1

N2 - In this work we shall present a study of inelastic light scattering involving inter-subband electron transitions in coupled GaAs-(Ga,Al)As quantum wells. Calculations include the electron related Raman differential cross section and Raman gain. The effects of an external nonresonant intense laser field are used in order to tune these output properties. The confined electron states will be described by means of a diagonalization procedure within the effective mass and parabolic band approximations. It is shown that the application of the intense laser field can produce values of the intersubband electron Raman gain above 400 cm−1. The system proposed here is an alternative choice for the development of AlxGa1−xAs semiconductor laser diodes that can be tuned via an external nonresonant intense laser field.

AB - In this work we shall present a study of inelastic light scattering involving inter-subband electron transitions in coupled GaAs-(Ga,Al)As quantum wells. Calculations include the electron related Raman differential cross section and Raman gain. The effects of an external nonresonant intense laser field are used in order to tune these output properties. The confined electron states will be described by means of a diagonalization procedure within the effective mass and parabolic band approximations. It is shown that the application of the intense laser field can produce values of the intersubband electron Raman gain above 400 cm−1. The system proposed here is an alternative choice for the development of AlxGa1−xAs semiconductor laser diodes that can be tuned via an external nonresonant intense laser field.

KW - Intense laser field

KW - Quantum well

KW - Raman scattering

UR - https://www.scopus.com/pages/publications/85009253044

U2 - 10.1016/j.optmat.2017.01.001

DO - 10.1016/j.optmat.2017.01.001

M3 - Article

AN - SCOPUS:85009253044

SN - 0925-3467

VL - 64

SP - 496

EP - 501

JO - Optical Materials

JF - Optical Materials

ER -

Electron Raman scattering in a double quantum well tuned by an external nonresonant intense laser field

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