@inproceedings{0f496e633dd544fa8363235b24c77e2d,
title = "Efficiency analysis of wide band-gap semiconductors for two-level and three-level power converters",
abstract = "Power devices based on wide band-gap materials are emerging as alternatives to silicon-based devices. These new devices allow designing and building converters with fewer power losses, and are thus more highly efficient than traditional power converters. Among the wide band-gap materials in use, silicon carbide (SiC) and gallium nitride (GaN) devices are the most promising because of their excellent properties and commercial availability. This paper compares the losses produced in two-level and three-level power converters that use the aforementioned technologies. In addition, we assess the impact on the converter performance caused by the modulation technique. Simulation results under various operating points are reported and compared.",
keywords = "Gallium Nitride (GaN), Losses, Modulation Techniques, Neutral-Point Clamped Converter (NPC), PLECS, Silicon, Silicon Carbide (SiC), Wide Band-Gap Semiconductors",
author = "David Lumbreras and Jordi Zaragoza and Juan Mon and Eduardo Galvez and Alfonso Collado",
note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 45th Annual Conference of the IEEE Industrial Electronics Society, IECON 2019 ; Conference date: 14-10-2019 Through 17-10-2019",
year = "2019",
month = oct,
doi = "10.1109/IECON.2019.8926766",
language = "English",
series = "IECON Proceedings (Industrial Electronics Conference)",
publisher = "IEEE Computer Society",
pages = "5126--5133",
booktitle = "Proceedings",
address = "United States",
}