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Donor-impurity related photoionization cross section in GaAs / Ga 1 -cdouble quantum rings: Effects of geometry and hydrostatic pressure

  • H. M. Baghramyan
  • , M. G. Barseghyan
  • , A. A. Kirakosyan
  • , D. Laroze
  • , C. A. Duque
  • Yerevan State University
  • Universidad de Antioquia

Producción científica: Contribución a una revista › Artículo › revisión exhaustiva

27 Citas (Scopus)

Resumen

The donor-impurity related photoionization cross section in GaAs/Ga1 -xAlxAs three-dimensional concentric double quantum rings is investigated. The photoionization cross section dependence on the incident photon energy is studied considering the effects of hydrostatic pressure, variations of aluminum concentration, geometries of the structure, and impurity position. The interpretation of the dipole matrix element, which reflects the photoionization probability, is also given. We have found that these parameters can lead to both redshift and blueshift of the photoionization spectrum and also influence the cross section peak value.

Idioma originalInglés
Páginas (desde-hasta)193-198
Número de páginas6
PublicaciónPhysica B: Condensed Matter
Volumen449
DOI
EstadoPublicada - 15 sept 2014

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