Background impurities in Si0.8 Ge0.2/Si/Si0.8 Ge0.2 n-type δ-doped QW

V. Tulupenko; C. A. Duque; A. L. Morales; A. Tiutiunnyk; R. Demediuk; T. Dmytrychenko; O. Fomina; V. Akimov; R. L. Restrepo; M. E. Mora-Ramos

doi:10.1002/pssb.201600464

Background impurities in Si_0.8 Ge_0.2/Si/Si_0.8 Ge_0.2 n-type δ-doped QW

V. Tulupenko
, C. A. Duque
, A. L. Morales
, A. Tiutiunnyk
, R. Demediuk
, T. Dmytrychenko
, O. Fomina
, V. Akimov
, R. L. Restrepo
, M. E. Mora-Ramos

Universidad de Antioquia
Donbass StateEngineering Academy
Universidad de Medellín
Universidad EIA
Universidad Autonoma del Estado de Morelos

Producción científica: Contribución a una revista › Artículo › revisión exhaustiva

3 Citas (Scopus)

Resumen

Additional (residual) impurities in the barriers change the energy profile of a quantum well. This means that they alter the ionization energy for the impurity delta layer situated within the quantum well. In turn, this is accompanied by the change of a V-shaped quantum well created by ionization of the delta layer. All of this is the subject of studies presented in this article. It has been shown that the most dramatic are the changes in the difference between the space-quantized energy levels for an edge-doped quantum well.

Idioma original	Inglés
Número de artículo	1600464
Publicación	Physica Status Solidi (B) Basic Research
Volumen	254
N.º	4
DOI	https://doi.org/10.1002/pssb.201600464
Estado	Publicada - 1 abr 2017
Publicado de forma externa	Sí

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10.1002/pssb.201600464

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title = "Background impurities in Si0.8 Ge0.2/Si/Si0.8 Ge0.2 n-type δ-doped QW",

abstract = "Additional (residual) impurities in the barriers change the energy profile of a quantum well. This means that they alter the ionization energy for the impurity delta layer situated within the quantum well. In turn, this is accompanied by the change of a V-shaped quantum well created by ionization of the delta layer. All of this is the subject of studies presented in this article. It has been shown that the most dramatic are the changes in the difference between the space-quantized energy levels for an edge-doped quantum well.",

keywords = "binding energy, delta doping, impurities, quantum wells",

author = "V. Tulupenko and Duque, \{C. A.\} and Morales, \{A. L.\} and A. Tiutiunnyk and R. Demediuk and T. Dmytrychenko and O. Fomina and V. Akimov and Restrepo, \{R. L.\} and Mora-Ramos, \{M. E.\}",

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TY - JOUR

T1 - Background impurities in Si0.8 Ge0.2/Si/Si0.8 Ge0.2 n-type δ-doped QW

AU - Tulupenko, V.

AU - Duque, C. A.

AU - Morales, A. L.

AU - Tiutiunnyk, A.

AU - Demediuk, R.

AU - Dmytrychenko, T.

AU - Fomina, O.

AU - Akimov, V.

AU - Restrepo, R. L.

AU - Mora-Ramos, M. E.

PY - 2017/4/1

Y1 - 2017/4/1

N2 - Additional (residual) impurities in the barriers change the energy profile of a quantum well. This means that they alter the ionization energy for the impurity delta layer situated within the quantum well. In turn, this is accompanied by the change of a V-shaped quantum well created by ionization of the delta layer. All of this is the subject of studies presented in this article. It has been shown that the most dramatic are the changes in the difference between the space-quantized energy levels for an edge-doped quantum well.

AB - Additional (residual) impurities in the barriers change the energy profile of a quantum well. This means that they alter the ionization energy for the impurity delta layer situated within the quantum well. In turn, this is accompanied by the change of a V-shaped quantum well created by ionization of the delta layer. All of this is the subject of studies presented in this article. It has been shown that the most dramatic are the changes in the difference between the space-quantized energy levels for an edge-doped quantum well.

KW - binding energy

KW - delta doping

KW - impurities

KW - quantum wells

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DO - 10.1002/pssb.201600464

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JO - Physica Status Solidi (B) Basic Research

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