Analytical Study on the Influence of Parasitic Elements in a Memristor

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Resumen

We study a memristive circuit with included parasitic elements, such as capacitance and inductance. In the multiple-scale scheme, we analytically show how the parasitic elements affect the voltage and the current. Finally, we provide an analytical expression for the intersection point coordinates, through which we discuss the functional behavior of the pinched hysteresis loop versus the operating frequency and the parasitic elements.

Idioma originalInglés
Número de artículo2640591
PublicaciónMathematical Problems in Engineering
Volumen2018
DOI
EstadoPublicada - 2018

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