Resumen
We study a memristive circuit with included parasitic elements, such as capacitance and inductance. In the multiple-scale scheme, we analytically show how the parasitic elements affect the voltage and the current. Finally, we provide an analytical expression for the intersection point coordinates, through which we discuss the functional behavior of the pinched hysteresis loop versus the operating frequency and the parasitic elements.
| Idioma original | Inglés |
|---|---|
| Número de artículo | 2640591 |
| Publicación | Mathematical Problems in Engineering |
| Volumen | 2018 |
| DOI | |
| Estado | Publicada - 2018 |
Huella
Profundice en los temas de investigación de 'Analytical Study on the Influence of Parasitic Elements in a Memristor'. En conjunto forman una huella única.Citar esto
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