About possible THz modulator on the base of delta-doped QWs

C. A. Duque; V. Akimov; R. Demediuk; V. Belykh; A. Tiutiunnyk; A. L. Morales; R. L. Restrepo; O. Nalivayko; O. Fomina; M. E. Mora-Ramos; V. Tulupenko

doi:10.1016/j.spmi.2015.07.048

About possible THz modulator on the base of delta-doped QWs

C. A. Duque
, V. Akimov
, R. Demediuk
, V. Belykh
, A. Tiutiunnyk
, A. L. Morales
, R. L. Restrepo
, O. Nalivayko
, O. Fomina
, M. E. Mora-Ramos
, V. Tulupenko

Producción científica: Contribución a una revista › Artículo › revisión exhaustiva

12 Citas (Scopus)

Resumen

The idea about a new type of THz modulator, based on the dependence of separation between space quantized energy levels in a quantum well (QW) on the degree of ionization of shallow impurity delta doped layer situated within the QW is supported with theoretical calculations of absorption coefficients for intersubband optical transitions of n-type Si_0.8Ge_0.2/Si/Si_0.8Ge_0.2 QW structure. Both center and edge doping of two QWs widths of - 10 and 20 nm - were considered at lattice temperatures 4 and 77 K for low and high degrees of impurity ionization. The obtained results are explained and they point to out the ranges of THz tuning of the structures under study. It is also emphasized that besides the electric field the changing temperature can control the efficiency of THz modulation.

Idioma original	Inglés
Páginas (desde-hasta)	5-11
Número de páginas	7
Publicación	Superlattices and Microstructures
Volumen	87
DOI	https://doi.org/10.1016/j.spmi.2015.07.048
Estado	Publicada - 6 mar. 2015
Publicado de forma externa	Sí

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title = "About possible THz modulator on the base of delta-doped QWs",

abstract = "The idea about a new type of THz modulator, based on the dependence of separation between space quantized energy levels in a quantum well (QW) on the degree of ionization of shallow impurity delta doped layer situated within the QW is supported with theoretical calculations of absorption coefficients for intersubband optical transitions of n-type Si0.8Ge0.2/Si/Si0.8Ge0.2 QW structure. Both center and edge doping of two QWs widths of - 10 and 20 nm - were considered at lattice temperatures 4 and 77 K for low and high degrees of impurity ionization. The obtained results are explained and they point to out the ranges of THz tuning of the structures under study. It is also emphasized that besides the electric field the changing temperature can control the efficiency of THz modulation.",

keywords = "Delta doping, Intersubband absorption, Quantum well, SiGe, TeraHertz modulator",

author = "Duque, \{C. A.\} and V. Akimov and R. Demediuk and V. Belykh and A. Tiutiunnyk and Morales, \{A. L.\} and Restrepo, \{R. L.\} and O. Nalivayko and O. Fomina and Mora-Ramos, \{M. E.\} and V. Tulupenko",

year = "2015",

month = mar,

day = "6",

doi = "10.1016/j.spmi.2015.07.048",

language = "English",

volume = "87",

pages = "5--11",

journal = "Superlattices and Microstructures",

issn = "0749-6036",

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TY - JOUR

T1 - About possible THz modulator on the base of delta-doped QWs

AU - Duque, C. A.

AU - Akimov, V.

AU - Demediuk, R.

AU - Belykh, V.

AU - Tiutiunnyk, A.

AU - Morales, A. L.

AU - Restrepo, R. L.

AU - Nalivayko, O.

AU - Fomina, O.

AU - Mora-Ramos, M. E.

AU - Tulupenko, V.

PY - 2015/3/6

Y1 - 2015/3/6

N2 - The idea about a new type of THz modulator, based on the dependence of separation between space quantized energy levels in a quantum well (QW) on the degree of ionization of shallow impurity delta doped layer situated within the QW is supported with theoretical calculations of absorption coefficients for intersubband optical transitions of n-type Si0.8Ge0.2/Si/Si0.8Ge0.2 QW structure. Both center and edge doping of two QWs widths of - 10 and 20 nm - were considered at lattice temperatures 4 and 77 K for low and high degrees of impurity ionization. The obtained results are explained and they point to out the ranges of THz tuning of the structures under study. It is also emphasized that besides the electric field the changing temperature can control the efficiency of THz modulation.

AB - The idea about a new type of THz modulator, based on the dependence of separation between space quantized energy levels in a quantum well (QW) on the degree of ionization of shallow impurity delta doped layer situated within the QW is supported with theoretical calculations of absorption coefficients for intersubband optical transitions of n-type Si0.8Ge0.2/Si/Si0.8Ge0.2 QW structure. Both center and edge doping of two QWs widths of - 10 and 20 nm - were considered at lattice temperatures 4 and 77 K for low and high degrees of impurity ionization. The obtained results are explained and they point to out the ranges of THz tuning of the structures under study. It is also emphasized that besides the electric field the changing temperature can control the efficiency of THz modulation.

KW - Delta doping

KW - Intersubband absorption

KW - Quantum well

KW - SiGe

KW - TeraHertz modulator

UR - https://www.scopus.com/pages/publications/84937485154

U2 - 10.1016/j.spmi.2015.07.048

DO - 10.1016/j.spmi.2015.07.048

M3 - Article

AN - SCOPUS:84937485154

SN - 0749-6036

VL - 87

SP - 5

EP - 11

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

ER -

About possible THz modulator on the base of delta-doped QWs

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