Abstract
The hydrogenic donor impurity states in two-dimensional GaAs/Ga0.7Al0.3As quantum dot and quantum ring have been investigated under the action of intense laser field. A laser dressed effect on both electron confining and electron-impurity Coulomb interaction potentials has been considered. The single electron energy spectrum and wave functions have been found using the effective mass approximation and exact diagonalization technique. The accidental degeneracy of the impurity states have been observed for different positions of the impurity and versus values of the laser field parameter. The obtained theoretical results indicate a novel opportunity to tune the performance of quantum dots and quantum rings and to control their specific properties by means of laser field.
| Original language | English |
|---|---|
| Pages (from-to) | 1-4 |
| Number of pages | 4 |
| Journal | Physica B: Condensed Matter |
| Volume | 501 |
| DOIs | |
| State | Published - 15 Nov 2016 |
Keywords
- Donor impurity
- Exact diagonalization technique
- Laser field
- Quantum dots
- Quantum rings
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