Intense Terahertz Radiation Effect on Electronic and Intraband Optical Properties of Semiconductor Quantum Rings

H. M. Baghramyan; M. G. Barseghyan; A. A. Kirakosyan; D. Laroze

doi:10.1007/978-3-319-95159-1_14

Intense Terahertz Radiation Effect on Electronic and Intraband Optical Properties of Semiconductor Quantum Rings

H. M. Baghramyan
, M. G. Barseghyan
, A. A. Kirakosyan
, D. Laroze

Institute of Higher Research

Universidad de Tarapacá
Armenian State Pedagogical University after Khachatur Abovyan
Yerevan State University
National University of Architecture and Construction of Armenia
Universidad Yachay Tech

Research output: Chapter in Book/Report/Conference proceeding › Chapter › peer-review

1 Scopus citations

Abstract

The current chapter aims to theoretically demonstrate that intense Terahertz (THz) laser field can be a powerful method for the controlling of electro-optical properties of quantum rings (QRs). We explore the electronic and impurity states, charge localization and intraband optical phenomena in GaAs/GaAl QRs irradiated by the intense THz laser field. Single and concentric double QRs, as well as artificial molecules formed by the laterally aligned QRs are explored. It is demonstrated how the laser field modifies the energy spectrum and wave functions by the strong distortion of the original cylindrical geometry of quantum confinement. Moreover, our findings give an insight on the laser field-affected inter-ring coupling of concentric double QRs and dissociation of QR molecules. Additionally, the new way of control of quantum-confining Stark effect with intense THz laser field is introduced.

Original language	English
Title of host publication	NanoScience and Technology
Publisher	Springer Nature
Pages	411-445
Number of pages	35
DOIs	https://doi.org/10.1007/978-3-319-95159-1_14
State	Published - 2018

Publication series

Name	NanoScience and Technology
ISSN (Print)	1434-4904

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10.1007/978-3-319-95159-1_14

Cite this

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title = "Intense Terahertz Radiation Effect on Electronic and Intraband Optical Properties of Semiconductor Quantum Rings",

abstract = "The current chapter aims to theoretically demonstrate that intense Terahertz (THz) laser field can be a powerful method for the controlling of electro-optical properties of quantum rings (QRs). We explore the electronic and impurity states, charge localization and intraband optical phenomena in GaAs/GaAl QRs irradiated by the intense THz laser field. Single and concentric double QRs, as well as artificial molecules formed by the laterally aligned QRs are explored. It is demonstrated how the laser field modifies the energy spectrum and wave functions by the strong distortion of the original cylindrical geometry of quantum confinement. Moreover, our findings give an insight on the laser field-affected inter-ring coupling of concentric double QRs and dissociation of QR molecules. Additionally, the new way of control of quantum-confining Stark effect with intense THz laser field is introduced.",

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AU - Laroze, D.

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AB - The current chapter aims to theoretically demonstrate that intense Terahertz (THz) laser field can be a powerful method for the controlling of electro-optical properties of quantum rings (QRs). We explore the electronic and impurity states, charge localization and intraband optical phenomena in GaAs/GaAl QRs irradiated by the intense THz laser field. Single and concentric double QRs, as well as artificial molecules formed by the laterally aligned QRs are explored. It is demonstrated how the laser field modifies the energy spectrum and wave functions by the strong distortion of the original cylindrical geometry of quantum confinement. Moreover, our findings give an insight on the laser field-affected inter-ring coupling of concentric double QRs and dissociation of QR molecules. Additionally, the new way of control of quantum-confining Stark effect with intense THz laser field is introduced.

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Intense Terahertz Radiation Effect on Electronic and Intraband Optical Properties of Semiconductor Quantum Rings

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