Intense laser field effect on D2+ molecular complex localized in semiconductor quantum wells

Y. A. Suaza; M. R. Fulla; D. Laroze; H. M. Baghramyan; J. H. Marin

doi:10.1016/j.cplett.2019.06.024

Intense laser field effect on D₂⁺ molecular complex localized in semiconductor quantum wells

Y. A. Suaza
, M. R. Fulla
, D. Laroze
, H. M. Baghramyan
, J. H. Marin

Institute of Higher Research

Universidad Nacional de Colombia
Universidad Católica Luis Amigó
Grupo de Investigación en Ciencias Electrónicas e Informáticas-GICEI-Institución Universitaria Pascual Bravo
Italian Institute of Technology

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

D₂⁺ molecular ion in a semiconductor quantum well under laser-field radiation by using finite elements method within the effective mass approximation is theoretically studied. The effects of the laser radiation, donor-donor separation, and quantum well width on the D₂⁺ total energy and the D₂⁺ binding energy corresponding to the second ionization process D₂⁺→D⁺+D⁺+e^- are analyzed. We show that the laser-field radiation modifies significantly the equilibrium length and the dissociation energy of a D₂⁺- complex in a quantum well. Our results in the limit cases are in good agreement with those previously reported for a single donor impurity D⁰.

Original language	English
Pages (from-to)	384-390
Number of pages	7
Journal	Chemical Physics Letters
Volume	730
DOIs	https://doi.org/10.1016/j.cplett.2019.06.024
State	Published - Sep 2019

Keywords

Binding energy
Coupled donors
Finite element method
H-like impurities
Laser field radiation
Quantum well

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10.1016/j.cplett.2019.06.024

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title = "Intense laser field effect on D2+ molecular complex localized in semiconductor quantum wells",

abstract = "D2+ molecular ion in a semiconductor quantum well under laser-field radiation by using finite elements method within the effective mass approximation is theoretically studied. The effects of the laser radiation, donor-donor separation, and quantum well width on the D2+ total energy and the D2+ binding energy corresponding to the second ionization process D2+→D++D++e- are analyzed. We show that the laser-field radiation modifies significantly the equilibrium length and the dissociation energy of a D2+- complex in a quantum well. Our results in the limit cases are in good agreement with those previously reported for a single donor impurity D0.",

keywords = "Binding energy, Coupled donors, Finite element method, H-like impurities, Laser field radiation, Quantum well",

author = "Suaza, \{Y. A.\} and Fulla, \{M. R.\} and D. Laroze and Baghramyan, \{H. M.\} and Marin, \{J. H.\}",

note = "Publisher Copyright: {\textcopyright} 2019",

year = "2019",

month = sep,

doi = "10.1016/j.cplett.2019.06.024",

language = "English",

volume = "730",

pages = "384--390",

journal = "Chemical Physics Letters",

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TY - JOUR

T1 - Intense laser field effect on D2+ molecular complex localized in semiconductor quantum wells

AU - Suaza, Y. A.

AU - Fulla, M. R.

AU - Laroze, D.

AU - Baghramyan, H. M.

AU - Marin, J. H.

PY - 2019/9

Y1 - 2019/9

N2 - D2+ molecular ion in a semiconductor quantum well under laser-field radiation by using finite elements method within the effective mass approximation is theoretically studied. The effects of the laser radiation, donor-donor separation, and quantum well width on the D2+ total energy and the D2+ binding energy corresponding to the second ionization process D2+→D++D++e- are analyzed. We show that the laser-field radiation modifies significantly the equilibrium length and the dissociation energy of a D2+- complex in a quantum well. Our results in the limit cases are in good agreement with those previously reported for a single donor impurity D0.

AB - D2+ molecular ion in a semiconductor quantum well under laser-field radiation by using finite elements method within the effective mass approximation is theoretically studied. The effects of the laser radiation, donor-donor separation, and quantum well width on the D2+ total energy and the D2+ binding energy corresponding to the second ionization process D2+→D++D++e- are analyzed. We show that the laser-field radiation modifies significantly the equilibrium length and the dissociation energy of a D2+- complex in a quantum well. Our results in the limit cases are in good agreement with those previously reported for a single donor impurity D0.

KW - Binding energy

KW - Coupled donors

KW - Finite element method

KW - H-like impurities

KW - Laser field radiation

KW - Quantum well

UR - https://www.scopus.com/pages/publications/85067241276

U2 - 10.1016/j.cplett.2019.06.024

DO - 10.1016/j.cplett.2019.06.024

M3 - Article

AN - SCOPUS:85067241276

SN - 0009-2614

VL - 730

SP - 384

EP - 390

JO - Chemical Physics Letters

JF - Chemical Physics Letters

ER -

Intense laser field effect on D₂⁺ molecular complex localized in semiconductor quantum wells

Abstract

Keywords

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