Impurity-related intraband absorption in coupled quantum dot-ring structure under lateral electric field

M. G. Barseghyan; H. M. Baghramyan; D. Laroze; J. Bragard; A. A. Kirakosyan

doi:10.1016/j.physe.2015.07.032

Impurity-related intraband absorption in coupled quantum dot-ring structure under lateral electric field

M. G. Barseghyan
, H. M. Baghramyan
, D. Laroze
, J. Bragard
, A. A. Kirakosyan

Institute of Higher Research

Yerevan State University
National University of Architecture and Construction of Armenia
Universidad de Tarapacá
University of Glasgow
University of Navarra

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

The effects of a lateral electric field on intraband absorption in GaAs/GaAlAs two-dimensional coupled quantum dot-ring structure with an on-center hydrogenic donor impurity are investigated. The confining potential of the system consists of two parabolas with various confinement energies. The calculations are made using the exact diagonalization technique. A selection rule for intraband transitions was found for x-polarized incident light. The absorption spectrum mainly exhibits a redshift with the increment of electric field strength. On the other hand, the absorption spectrum can exhibit either a blue- or redshift depending on the values of confinement energies of dot and ring. Additionally, electric field changes the energetic shift direction influenced by the variation of barrier thickness of the structure.

Original language	English
Pages (from-to)	421-425
Number of pages	5
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	74
DOIs	https://doi.org/10.1016/j.physe.2015.07.032
State	Published - 12 Aug 2015

Keywords

Coupled quantum dot-ring
Exact diagonalization method
Hydrogenic donor impurity
Lateral electric field

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10.1016/j.physe.2015.07.032

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title = "Impurity-related intraband absorption in coupled quantum dot-ring structure under lateral electric field",

abstract = "The effects of a lateral electric field on intraband absorption in GaAs/GaAlAs two-dimensional coupled quantum dot-ring structure with an on-center hydrogenic donor impurity are investigated. The confining potential of the system consists of two parabolas with various confinement energies. The calculations are made using the exact diagonalization technique. A selection rule for intraband transitions was found for x-polarized incident light. The absorption spectrum mainly exhibits a redshift with the increment of electric field strength. On the other hand, the absorption spectrum can exhibit either a blue- or redshift depending on the values of confinement energies of dot and ring. Additionally, electric field changes the energetic shift direction influenced by the variation of barrier thickness of the structure.",

keywords = "Coupled quantum dot-ring, Exact diagonalization method, Hydrogenic donor impurity, Lateral electric field",

author = "Barseghyan, \{M. G.\} and Baghramyan, \{H. M.\} and D. Laroze and J. Bragard and Kirakosyan, \{A. A.\}",

note = "Publisher Copyright: {\textcopyright} 2015 Elsevier B.V. Allrightsreserved.",

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doi = "10.1016/j.physe.2015.07.032",

language = "English",

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TY - JOUR

T1 - Impurity-related intraband absorption in coupled quantum dot-ring structure under lateral electric field

AU - Barseghyan, M. G.

AU - Baghramyan, H. M.

AU - Laroze, D.

AU - Bragard, J.

AU - Kirakosyan, A. A.

PY - 2015/8/12

Y1 - 2015/8/12

N2 - The effects of a lateral electric field on intraband absorption in GaAs/GaAlAs two-dimensional coupled quantum dot-ring structure with an on-center hydrogenic donor impurity are investigated. The confining potential of the system consists of two parabolas with various confinement energies. The calculations are made using the exact diagonalization technique. A selection rule for intraband transitions was found for x-polarized incident light. The absorption spectrum mainly exhibits a redshift with the increment of electric field strength. On the other hand, the absorption spectrum can exhibit either a blue- or redshift depending on the values of confinement energies of dot and ring. Additionally, electric field changes the energetic shift direction influenced by the variation of barrier thickness of the structure.

AB - The effects of a lateral electric field on intraband absorption in GaAs/GaAlAs two-dimensional coupled quantum dot-ring structure with an on-center hydrogenic donor impurity are investigated. The confining potential of the system consists of two parabolas with various confinement energies. The calculations are made using the exact diagonalization technique. A selection rule for intraband transitions was found for x-polarized incident light. The absorption spectrum mainly exhibits a redshift with the increment of electric field strength. On the other hand, the absorption spectrum can exhibit either a blue- or redshift depending on the values of confinement energies of dot and ring. Additionally, electric field changes the energetic shift direction influenced by the variation of barrier thickness of the structure.

KW - Coupled quantum dot-ring

KW - Exact diagonalization method

KW - Hydrogenic donor impurity

KW - Lateral electric field

UR - https://www.scopus.com/pages/publications/84938868868

U2 - 10.1016/j.physe.2015.07.032

DO - 10.1016/j.physe.2015.07.032

M3 - Article

AN - SCOPUS:84938868868

SN - 1386-9477

VL - 74

SP - 421

EP - 425

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

ER -

Impurity-related intraband absorption in coupled quantum dot-ring structure under lateral electric field

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Keywords

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