Background impurities in Si0.8 Ge0.2/Si/Si0.8 Ge0.2 n-type δ-doped QW

V. Tulupenko; C. A. Duque; A. L. Morales; A. Tiutiunnyk; R. Demediuk; T. Dmytrychenko; O. Fomina; V. Akimov; R. L. Restrepo; M. E. Mora-Ramos

doi:10.1002/pssb.201600464

Background impurities in Si_0.8 Ge_0.2/Si/Si_0.8 Ge_0.2 n-type δ-doped QW

V. Tulupenko
, C. A. Duque
, A. L. Morales
, A. Tiutiunnyk
, R. Demediuk
, T. Dmytrychenko
, O. Fomina
, V. Akimov
, R. L. Restrepo
, M. E. Mora-Ramos

Universidad de Antioquia
Donbass StateEngineering Academy
Universidad de Medellín
Universidad EIA
Universidad Autonoma del Estado de Morelos

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Additional (residual) impurities in the barriers change the energy profile of a quantum well. This means that they alter the ionization energy for the impurity delta layer situated within the quantum well. In turn, this is accompanied by the change of a V-shaped quantum well created by ionization of the delta layer. All of this is the subject of studies presented in this article. It has been shown that the most dramatic are the changes in the difference between the space-quantized energy levels for an edge-doped quantum well.

Original language	English
Article number	1600464
Journal	Physica Status Solidi (B) Basic Research
Volume	254
Issue number	4
DOIs	https://doi.org/10.1002/pssb.201600464
State	Published - 1 Apr 2017
Externally published	Yes

Keywords

binding energy
delta doping
impurities
quantum wells

Access to Document

10.1002/pssb.201600464

Cite this

@article{3d62d99ff1d64605a0f05dbcc0b40dbf,

title = "Background impurities in Si0.8 Ge0.2/Si/Si0.8 Ge0.2 n-type δ-doped QW",

abstract = "Additional (residual) impurities in the barriers change the energy profile of a quantum well. This means that they alter the ionization energy for the impurity delta layer situated within the quantum well. In turn, this is accompanied by the change of a V-shaped quantum well created by ionization of the delta layer. All of this is the subject of studies presented in this article. It has been shown that the most dramatic are the changes in the difference between the space-quantized energy levels for an edge-doped quantum well.",

keywords = "binding energy, delta doping, impurities, quantum wells",

author = "V. Tulupenko and Duque, \{C. A.\} and Morales, \{A. L.\} and A. Tiutiunnyk and R. Demediuk and T. Dmytrychenko and O. Fomina and V. Akimov and Restrepo, \{R. L.\} and Mora-Ramos, \{M. E.\}",

note = "Publisher Copyright: {\textcopyright} 2016 WILEY-VCH Verlag GmbH \& Co. KGaA, Weinheim",

year = "2017",

month = apr,

day = "1",

doi = "10.1002/pssb.201600464",

language = "English",

volume = "254",

journal = "Physica Status Solidi (B) Basic Research",

issn = "0370-1972",

number = "4",

}

TY - JOUR

T1 - Background impurities in Si0.8 Ge0.2/Si/Si0.8 Ge0.2 n-type δ-doped QW

AU - Tulupenko, V.

AU - Duque, C. A.

AU - Morales, A. L.

AU - Tiutiunnyk, A.

AU - Demediuk, R.

AU - Dmytrychenko, T.

AU - Fomina, O.

AU - Akimov, V.

AU - Restrepo, R. L.

AU - Mora-Ramos, M. E.

PY - 2017/4/1

Y1 - 2017/4/1

N2 - Additional (residual) impurities in the barriers change the energy profile of a quantum well. This means that they alter the ionization energy for the impurity delta layer situated within the quantum well. In turn, this is accompanied by the change of a V-shaped quantum well created by ionization of the delta layer. All of this is the subject of studies presented in this article. It has been shown that the most dramatic are the changes in the difference between the space-quantized energy levels for an edge-doped quantum well.

AB - Additional (residual) impurities in the barriers change the energy profile of a quantum well. This means that they alter the ionization energy for the impurity delta layer situated within the quantum well. In turn, this is accompanied by the change of a V-shaped quantum well created by ionization of the delta layer. All of this is the subject of studies presented in this article. It has been shown that the most dramatic are the changes in the difference between the space-quantized energy levels for an edge-doped quantum well.

KW - binding energy

KW - delta doping

KW - impurities

KW - quantum wells

UR - https://www.scopus.com/pages/publications/84995471504

U2 - 10.1002/pssb.201600464

DO - 10.1002/pssb.201600464

M3 - Article

AN - SCOPUS:84995471504

SN - 0370-1972

VL - 254

JO - Physica Status Solidi (B) Basic Research

JF - Physica Status Solidi (B) Basic Research

IS - 4

M1 - 1600464

ER -

Background impurities in Si_0.8 Ge_0.2/Si/Si_0.8 Ge_0.2 n-type δ-doped QW

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this